features ? silicon epitaxial planar diodes ? saving space ? hermetic sealed parts ? fits onto sod323 / sot23 footprints ? electrical data identical with the devices 1n4148 and 1n4448 respectively ? micro melf package ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? extreme fast switches mechanical data case: micromelf glass case weight: approx. 12 mg cathode band color: black packaging codes/options: tr3 / 10 k per 13" reel (8 mm tape), 10 k/box tr / 2.5 k per 7" reel (8 mm tape), 12.5 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation ordering code remarks MCL4148 v rrm = 100 v, v f at i f 50 ma = 1 v MCL4148-tr3 or MCL4148-tr tape and reel mcl4448 v rrm = 100 v, v f at i f 100 ma = 1 v mcl4448-tr3 or mcl4448-tr tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 100 v reverse voltage v r 75 v peak forward surge current t p = 1 s i fsm 2a repetitive peak forward current i frm 450 ma forward continuous current i f 200 ma average forward current v r = 0 i fav 150 ma power dissipation p tot 500 mw MCL4148/mcl4448 small signal fast switching diode micro melf dimension in millimeters http://www.luguang.cn mail:lge@luguang.cn
thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit junction to ambient air mounted on epoxy-glass hard tissue, fig. 5, 35 m copper clad, 0.9 mm 2 copper area per electrode r thja 500 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c parameter test condition part symbol min ty p. max unit forward voltage i f = 5 ma mcl4448 v f 620 720 mv i f = 50 ma MCL4148 v f 860 1000 mv i f = 100 ma mcl4448 v f 930 1000 mv reverse current v r = 20 v i r 25 na v r = 20 v, t j = 150 c i r 50 a v r = 75 v i r 5a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms v (br) 100 v diode capacitance v r = 0, f = 1 mhz, v hf = 50 mv c d 4pf rectification efficiency v hf = 2 v, f = 100 mhz r 45 % reverse recovery time i f = i r =10 ma, i r = 1 ma t rr 8ns i f = 10 ma, v r = 6 v, i r = 0.1 x i r , r l = 100 t rr 4ns figure 1. forward current vs. forward voltage 0 0.4 0. 8 1.2 1.6 0.1 1 10 100 1000 i - for w ard c u rrent (ma) f v f - for w ard v oltage (v ) 2.0 16641 mcl 414 8 scattering limit t j = 25 c figure 2. forward current vs. forward voltage 0 0.4 0. 8 1.2 1.6 0.1 1 10 100 1000 i - for w ard c u rrent (ma) f v f - for w ard v oltage (v ) 2.0 16643 mcl 444 8 scattering limit t j =25 c MCL4148/mcl4448 small signal fast switching diode http://www.luguang.cn mail:lge@luguang.cn
figure 3. reverse current vs. reverse voltage figure 4. diode capacitance vs. reverse voltage figure 5. board for r thja definition (in mm) 1 10 100 1000 i- re v erse c u rrent (na) r v r -re v erse v oltage ( v ) 10 1 100 94 909 8 t j = 25 c scattering limit 0.1 1 10 0 0.5 1.0 1.5 2.0 3.0 c - diode capacitance (pf) d 100 94 9099 2.5 v r -re v erse v oltage ( v ) t f=1mhz j = 25 c 25 2.5 10 0.71 1.3 1.27 9.9 24 0.152 0.355 95 10329 MCL4148/mcl4448 small signal fast switching diode http://www.luguang.cn mail:lge@luguang.cn
|
